Gallium arsenide multijunction

High-efficiency multijunction cells were originally developed for special applications such as satellites and space exploration, but at present, their use in terrestrial concentrators might be the lowest cost alternative in terms of $/kWh and $/W. These multijunction cells consist of multiple thin films produced using metalorganic vapour phase epitaxy. A triple-junction cell, for example, may consist of the semiconductors: GaAs, Ge, and GaInP₂. Each type of semiconductor will have a characteristic band gap energy which, loosely speaking, causes it to absorb light most efficiently at a certain color, or more precisely, to absorb electromagnetic radiation over a portion of the spectrum. The semiconductors are carefully chosen to absorb nearly all of the solar spectrum, thus generating electricity from as much of the solar energy as possible.

GaAs based multijunction devices are the most efficient solar cells to date, reaching a record high of 40.7% efficiency under "500-sun" solar concentration and laboratory conditions.

This technology is currently being utilized in the Mars rover missions.

Tandem solar cells based on monolithic, series connected, gallium indium phosphide (GaInP), gallium arsenide GaAs, and germanium Ge pn junctions, are seeing demand rapidly rise. In just the past 12 months (12/2006 - 12/2007), the cost of 4N gallium metal has risen from about $350 per kg to $680 per kg. Additionally, germanium metal prices have risen substantially to $1000–$1200 per kg this year. Those materials include gallium (4N, 6N and 7N Ga), arsenic (4N, 6N and 7N) and germanium, pyrolitic boron nitride (pBN) crucibles for growing crystals, and boron oxide, these products are critical to the entire substrate manufacturing industry.

Triple-junction GaAs solar cells were also being used as the power source of the Dutch four-time World Solar Challenge winners Nuna in 2005 and 2007, and also by the Dutch solar cars Solutra (2005) and Twente One (2007).

The Dutch Radboud University Nijmegen set the record for thin film solar cell efficiency using a single junction GaAs to 25.8% in August 2008 using only 4 µm thick GaAs layer which can be transferred from a wafer base to glass or plastic film.